AT-32011分立半导体产品的晶体管-双极（BJT）-射频规格书PDF中文资料

描述 Description

Hewlett Packard’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-32033 uses the 3␣ lead SOT-23, while the AT-320 11 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 20␣ emitter finger interdigitated geometry yields an easy to match to and extremely fast transistor with moderate power, low noise resistance, and low operating currents.

特性 Features

• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation

• 900 MHz Performance:

AT-32011: 1 dB NF, 14 dB GA

AT-32033: 1 dB NF, 12.5 dB GA

• Characterized for End-Of-Life Battery Use (2.7 V)

• SOT-23 and SOT-143 SMT Plastic Packages

• Tape-And-Reel Packaging Option Available[1]