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AT-31033-TR1分立半导体产品的晶体管-双极(BJT)-射频规格书PDF中文资料

AT-31033-TR1
厂商型号

AT-31033-TR1

参数属性

AT-31033-TR1 封装/外壳为TO-236-3,SC-59,SOT-23-3;包装为散装;类别为分立半导体产品的晶体管-双极(BJT)-射频;产品描述:RF TRANS NPN 5.5V SOT23

功能描述

Low Current, High Performance NPN Silicon Bipolar Transistor

封装外壳

TO-236-3,SC-59,SOT-23-3

文件大小

137.49 Kbytes

页面数量

10

生产厂商 Agilent(Hewlett-Packard)
企业简称

HP安捷伦科技

中文名称

安捷伦科技有限公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-26 14:03:00

人工找货

AT-31033-TR1价格和库存,欢迎联系客服免费人工找货

AT-31033-TR1规格书详情

Description

Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances.

Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-Scientific-Medical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications.

The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard’s 10 GHz fT, 30 GHz fmax Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self- alignment techniques, and gold metalization in the fabrication of these devices.

Features

• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation

• 900 MHz Performance:

AT-31011: 0.9 dB NF, 13 dB GA

AT-31033: 0.9 dB NF, 11 dB GA

• Characterized for End-Of Life Battery Use (2.7 V)

• SOT-143 SMT Plastic Package

• Tape-And-Reel Packaging Option Available[1]

产品属性

  • 产品编号:

    AT-31033-TR1G

  • 制造商:

    Broadcom Limited

  • 类别:

    分立半导体产品 > 晶体管 - 双极(BJT)- 射频

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 电压 - 集射极击穿(最大值):

    5.5V

  • 噪声系数(dB,不同 f 时的典型值):

    0.9dB ~ 1.2dB @ 900MHz

  • 增益:

    9dB ~ 11dB

  • 功率 - 最大值:

    150mW

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    70 @ 1mA,2.7V

  • 电流 - 集电极 (Ic)(最大值):

    16mA

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    SOT-23

  • 描述:

    RF TRANS NPN 5.5V SOT23

供应商 型号 品牌 批号 封装 库存 备注 价格
23+
SOT23
14242
原装现货特价热销
询价
HP
24+
SOT23
5650
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
HP
2223+
SOT-23
26800
只做原装正品假一赔十为客户做到零风险
询价
AVAGO/安华高
2022+
SOT-23
5242
原厂代理 终端免费提供样品
询价
AVAGO/安华高
2021+
SOT-23
20690
十年专营原装现货,假一赔十
询价
HP
24+
SOT23
6980
原装现货,可开13%税票
询价
AVAGO/安华高
21+
SOT-23
120000
长期代理优势供应
询价
AVAGO
23+
SOT23-3
15000
全新原装现货,价格优势
询价
AGILENT
24+
SOT23
90000
一级代理商进口原装现货、价格合理
询价
AVAGO
ROHS+Original
NA
3000
专业电子元器件供应链/QQ 350053121 /正纳电子
询价