ASM811JEUS-T数据手册库存现货瑞萨ALSC-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
ASM811JEUS-T	文件：229.69 Kbytes Page：10 Pages	4 Pin P Voltage Supervisor with Manual Reset 文件：229.69 Kbytes 页数：10 Pages	ALSC	ALSC
TC811CPL	文件：171.85 Kbytes Page：12 Pages	3-1/2 DIGIT A/D CONVERTER WITH HOLD AND DIFFERENTIAL REFERENCE INPUTS 文件：171.85 Kbytes 页数：12 Pages	TELCOM	TELCOM
UPA811	文件：49.15 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold 文件：49.15 Kbytes 页数：6 Pages	NEC 瑞萨	NEC
UPA811T	文件：49.15 Kbytes Page：6 Pages	HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4228 SMALL MINI MOLD The µPA811T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • High Gain \|S21e\|2 = 6.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA • A Small Mini Mold 文件：49.15 Kbytes 页数：6 Pages	NEC 瑞萨	NEC

更多ASM811JEUS-T供应商更新时间2026-6-2 9:01:00