CEN2364

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,2.5A,RDS(ON)=110mW@VGS=10V. RDS(ON)=130mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

D2364

READONLYMEMORY8192WORDS,8BITS/WORD

READONLYMEMORY8192WORDS,8BITS/WORD

ECWF2364MB

MetallizedPolypropyleneFilmCapacitor

H2364F

Renesas16-BitSingle-ChipMicrocomputerH8SFamily/H8S/2300Series

K2364

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK2363/2SK2364isN-ChannelMOSFieldEffectTransistordesignedforhighvoltageswitchingapplications. FEATURES •LowOn-Resistance 2SK2363:RDS(on)=0.5Ω(VGS=10V,ID=4.0A) 2SK2364:RDS(on)=0.6Ω(VGS=10V,ID=4.0A) •LowCissCiss=1600pFTYP.

LMX2364

2.6GHzPLLatinumFractionalRFFrequencySynthesizerwith850MHzIntegerIFFrequencySynthesizer

LMX2364SLEX

2.6GHzPLLatinumFractionalRFFrequencySynthesizerwith850MHzIntegerIFFrequencySynthesizer

LMX2364TM

2.6GHzPLLatinumFractionalRFFrequencySynthesizerwith850MHzIntegerIFFrequencySynthesizer

LMX2364TMX

2.6GHzPLLatinumFractionalRFFrequencySynthesizerwith850MHzIntegerIFFrequencySynthesizer

LPC2364

Single-chip16-bit/32-bitmicrocontrollers;upto512kBflashnull

Generaldescription TheLPC2364/65/66/67/68microcontrollersarebasedona16-bit/32-bitARM7TDMI-SCPUwithreal-timeemulationthatcombinesthemicrocontrollerwithupto512kBofembeddedhigh-speedflashmemory.A128-bitwidememoryinterfaceandauniqueacceleratorarchitectureenable

ETC