零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentfrom2mAto30mA) NPNSiliconRFTransistor •Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz | SIEMENS Siemens Ltd | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor* •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom2mAto30mA •fT=8GHz,F=0.9dBat900MHz *Shorttermdescription | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor Preliminarydata •Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SiliconNPNPlanarRFTransistor Features •Lownoisefigure •Highpowergain Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. | VishayVishay Siliconix 威世科技 | Vishay | ||
SiliconNPNPlanarRFTransistor Description Themainpurposeofthisbipolartransistorisbroadbandamplificationupto2GHz.Inthespace-saving3-pinsurface-mountSOT490packageelectricalperformanceandreliabilityaretakentoanewlevelcoveringasmallerfootprintonPCboardsthanpreviouspackages.Inadditiontos | VishayVishay Siliconix 威世科技 | Vishay | ||
SiliconNPNPlanarRFTransistor Features •Lownoisefigure •Highpowergain Applications Forlownoiseandhighgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. | VishayVishay Siliconix 威世科技 | Vishay | ||
NPNSiliconRFTransistor(Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentfrom2mAto30mA) NPNSiliconRFTransistor •Forlow-noise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz F=1.2dBat900MHz | SIEMENS Siemens Ltd | SIEMENS | ||
NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisibleleads •QualificationreportaccordingtoAEC-Q101available | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
iscSiliconNPNRFTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
LowNoiseSiliconBipolarRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor(HiRelDiscreteandMicrowaveSemiconductor) Features •HiRelDiscreteandMicrowaveSemiconductor •Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA •Hermeticallysealedmicrowavepackage •fT=8GHz,F=2.3dBat2GHz •eesaqualified •ESA/SCCDetailSpec.No.:5611/006 | SIEMENS Siemens Ltd | SIEMENS | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
HiRelNPNSiliconRFTransistor HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号:
ASJ183A
- 制造商:
ADAM-TECH
- 制造商全称:
Adam Technologies, Inc.
- 功能描述:
2.6mm & 3.5mm AUDIO JACKS STEREO & MONO EARPHONE JACKS
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Adam Tech |
2308+ |
314590 |
一级代理,原装正品,公司现货! |
询价 | |||
ADAM |
24+25+/26+27+ |
车规-连接器 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
OTHERS |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
SONNY |
2022+ |
60 |
全新原装 货期两周 |
询价 | |||
ADAM-TECH |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
AD |
22+ |
NA |
30000 |
原装现货假一罚十 |
询价 | ||
AD |
23+ |
原厂封装 |
5177 |
现货 |
询价 | ||
ADAMTECH |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
ADAMTECH |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
INC |
930 |
询价 |
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