HiRel NPN Silicon RF Transistor

HiRel NPN Silicon RF Transistor ● HiRel Discrete and Microwave Semiconductor ● For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. ● Hermetically sealed microwave package ● fT= 8 GHz F = 2.3 dB at 2 GHz ● eesa qualified ● ESA/SCC Detail Spec. No.: 5611/006

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INFINEON

英飞凌

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

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MOTOROLA

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

文件：221.19 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA

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NTE