NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description

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INFINEON

英飞凌

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain Applications    For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

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VISHAYVishay Siliconix

威世威世科技公司

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

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MOTOROLA

摩托罗拉

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA

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NTE