首页 >ASDM30N90KQ-R>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-channel900V-30A-TO-247VeryfastPowerMESHIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
ReverseConductingIGBTwithmonolithicbodydiode Features: •1.5VtypicalsaturationvoltageofIGBT •TrenchandFieldstoptechnologyfor900Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCE(sat | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
ReverseConductingIGBTwithmonolithicbodydiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
SoftSwitchingSeries | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
LowLossDuoPack:IGBTinTrenchStopandFieldstoptechnologywithanti-paralleldiode LowLossDuoPack:IGBTinTrenchStop®andFieldstoptechnologywithanti-paralleldiode Features: •1.1VForwardvoltageofantiparalleldiode •TrenchStop®andFieldstoptechnologyfor900Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestab | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-channel900V-30A-TO-247VeryfastPowerMESHIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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