首页 >AS6200C-AWLM-S>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Dual10GBASE-KX4FabricInterfacechannels | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
3-PHASEDDMOTORDRIVER | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
6.0ASCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Lowpowerloss,Highefficiency •Highsurgecapacity •F | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
6.0ASCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,1.8A,RDS(ON)=250mΩ@VGS=10V. RDS(ON)=330mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■60V,2.6A,RDS(ON)=230mΩ@VGS=10V. RDS(ON)=270mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
LED-PhotoconductorIsolators [CLAIREX] LED-PhotoconductorIsolators | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
EMIFilterswithESDProtectionforMicrophoneInterface | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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