MOSFETs

Anbonsemi

安邦

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：N-CHANNEL ENHANCEMENT MODE MOSFE

ANBON SEMICONDUCTOR (INT'L) LIMITED

Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION DC/DC Converters Load Switching for Portable Applications

文件：600.09 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

N-Channel Enhancement Mode Power MOSFET

文件：520.59 Kbytes 页数：6 Pages

Belling

上海贝岭

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-23 package.

文件：281.47 Kbytes 页数：4 Pages

CET

华瑞