Anti-surge Thick Film Chip Resistors

文件：639.87 Kbytes 页数：2 Pages

OHMITE

Reduction of assembly costs

文件：646.94 Kbytes 页数：2 Pages

OHMITE

Reduction of assembly costs

文件：646.94 Kbytes 页数：2 Pages

OHMITE

Anti-surge Thick Film Chip Resistors

文件：639.87 Kbytes 页数：2 Pages

OHMITE

丝印：AS120MM1；Package：PG-TO263-7-HV-ND5.8；Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET

Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 22 A at TC = 25°C • RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest de

文件：1.64222 Mbytes 页数：16 Pages

Infineon

英飞凌

Protective Cap, Black, Aluminum Alloy, DEUTSCH AS Standard

Protective Cap, Black, Aluminum Alloy, DEUTSCH AS Standard

TE

泰科

车用贴片电阻

YAGEO

国巨

车用贴片电阻

YAGEO

国巨

Package：1206（3216 公制）；包装：卷带（TR） 类别：电容器 陶瓷电容器 描述：CAP CER 0.1UF 100V X7R 1206

YAGEO

国巨

Package：1206（3216 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电容器 陶瓷电容器 描述：CAP CER 0.22UF 100V X7R 1206

YAGEO

国巨