首页 >ARJ20A03J>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMDRELAYSWITH8GHzCAPABILITIES | NAISNais(Matsushita Electric Works) 松下电器松下电器机电(中国)有限公司 | NAIS | ||
SMDRELAYSWITH8GHzCAPABILITIES | NAISNais(Matsushita Electric Works) 松下电器松下电器机电(中国)有限公司 | NAIS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,197A,RDS(ON)=2mΩ@VGS=10V. RDS(ON)=3mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
SchottkyBarrierDiode | KSSKyocera Kinseki Corpotation 京瓷京瓷株式会社 | KSS | ||
SchottkyBarrierDiode FEATURES *TO-220ABCase *FullyMolded *DualDiodes–CathodeCommon *LowForwardVoltageDrop *HighSurgeCapability *Tj=150°Coperation | NIEC Nihon Inter Electronics Corporation | NIEC | ||
SBDDUALDIODES-CATHODECOMMON FEATURES *SimilartoTO-220ABCase *FullyMoldedIsolation *DualDiodes–CathodeCommon *LowForwardVoltageDrop *LowPowerLoss,HighEfficiency *HighSurgeCapability *Tj=150°Coperation | NIEC Nihon Inter Electronics Corporation | NIEC | ||
SchottkyBarrierDiode SchottkyBarrierDiode | KSSKyocera Kinseki Corpotation 京瓷京瓷株式会社 | KSS | ||
SchottkyBarrierDiode FEATURES *SimilartoTO-220ABCase *DualDiodes–CathodeCommon *LowForwardVoltageDrop *HighSurgeCapability *Tj=150°Coperation | NIEC Nihon Inter Electronics Corporation | NIEC | ||
SwitchmodeFullPlasticDualSchottkyBarrierPowerRectifiers | SEMIHOW SemiHow Co.,Ltd. | SEMIHOW | ||
SBD | NI National Instruments Inc. | NI |
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