RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE

The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specifie

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ADPOW

Round Type

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PANASONIC

松下

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor . . . designed primarily for applications as a high–power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • Specified 28 Volt, 30 MHz Characteristics — Output Power = 80 W (PEP) Minimum Gain =

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MOTOROLA

摩托罗拉

Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current, IG

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NTE