N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. • Specified 300 Volt, 40.68 MHz Characteristics: Output Power = 150 Watts. Gain = 13dB (

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ADPOW

RF VDMOS Power Devices

Microchip

微芯科技

Package：TO-247-3；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF PWR MOSFET 1200V 6A TO-247

MICROCHIP

微芯科技

Square Type

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PANASONIC

松下

Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications

Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . ±30V Gate Current, IG

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NTE

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of PLVA450A to PLVA468A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: a

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PHI

PHI