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BD410	文件：72.17 Kbytes Page：3 Pages	NPNEPITAXILASILICONPOWERTRANSISTORS NPNEPITAXILASILICONPOWERTRANSISTORS TheyaresiliconepitaxialplanarNPNpowertransistorsmountedinaTO-126plasticpackage. AF-amplifierforhighsupplyvoltageTheyareintendedforcontrolcircuit,verticaloutputstagesinTVsets,andgeneralpurposeapplications.Complianceto	COMSET Comset Semiconductor	COMSET
BF410	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BF410A	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BF410A	文件：36.05 Kbytes Page：6 Pages	N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BF410B	文件：36.05 Kbytes Page：6 Pages	N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BF410B	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BF410C	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BF410C	文件：36.05 Kbytes Page：6 Pages	N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BF410D	文件：36.05 Kbytes Page：6 Pages	N-channelsiliconfield-effecttransistors DESCRIPTION AsymmetricalN-channelplanarepitaxialjunctionfield-effecttransistorsinaplasticTO-92variant;intendedforapplicationsuptotheVHFrange. TheseFETscanbesuppliedinfourIDSSgroups.Specialfeaturesarethelowfeedbackcapacitanceandthelownoisefigure.Thanks	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BF410D	文件：54.98 Kbytes Page：3 Pages	LOW-NOISEN-CHANNELJUNCTIONFIELD-EFFECTTRANSISTORFORRFAPPLICATIONS Low-NoiseN-ChannelJunctionField-EffectTransistorforRFApplications BF410A,B,C,andDareasymmetricepitaxialplanarN-channeljunctionfield-effecttransistorsinplasticpackagesimilartoTO92(10A3DIN41888).TheyaredesignedforuseuptotheVHFrange.	SIEMENS Siemens Ltd	SIEMENS
BFG410	文件：104.6 Kbytes Page：12 Pages	NPN22GHzwidebandtransistor DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG410W	文件：104.6 Kbytes Page：12 Pages	NPN22GHzwidebandtransistor DESCRIPTION NPNdoublepolysiliconwidebandtransistorwithburiedlayerforlowvoltageapplicationsinaplastic,4-pindual-emitterSOT343Rpackage. FEATURES •Veryhighpowergain •Lownoisefigure •Hightransitionfrequency •Emitteristhermallead •Lowfeedbackcapacitance. APPLI	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG410W	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFP410	文件：579.47 Kbytes Page：8 Pages	LowNoiseSiliconBipolarRFTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BFP410	文件：551.66 Kbytes Page：8 Pages	NPNSiliconRFTransistor LowNoiseSiliconBipolarRFTransistor •Lowcurrentdevicesuitablee.g.forhandhelds •Forhighfrequencyoscillatorse.g.DROforLNB •ForISMbandapplicationslike AutomaticMeterReading,Sensorsetc. •TransitfrequencyfT=25GHz •Pb-free(RoHScompliant)andhalogen-freepa	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
BPF-A410	文件：448.5 Kbytes Page：1 Pages	BandpassFilter	MINIMini-Circuits 微型电路	MINI
BRUS410	文件：75.57 Kbytes Page：2 Pages	ULTRA-FASTRECOVERY30to35AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING	edi edi	edi
BTM410	文件：1.51438 Mbytes Page：25 Pages	modulesfromLairdaredesignedtomeettheneedsofdeveloperswhowishtoaddrobust	LSTD Laird Tech Smart Technology	LSTD
BTS410E	文件：403.14 Kbytes Page：12 Pages	High-sideswitch PROFET® High-sideswitch Short-circuitprotection Overtemperatureprotection Overloadprotection Loaddumpprotection?) Undervoltageandovervollaﬂesshutdownwithauto-restartandhysteresis Reversebatteryprotection Inputandstatusprotection *Clampofnegativeoutput	SIEMENS Siemens Ltd	SIEMENS
BUF410	文件：245.5 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor DESCRIPTION ·HighVoltage ·HighSpeedSwitching APPLICATIONS ·Designedforuseinhigh-frequencypowersuppliesandmotorcontrolapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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详细参数

型号：
AQW410SZ
功能描述：
固态继电器-PCB安装 RELAY OPTO DPST-NC 100MA 8SOP
RoHS：
否
制造商：
Omron Electronics
负载电压额定值：
40 V
负载电流额定值：
120 mA
触点形式：
1 Form A(SPST-NO)
输出设备：
MOSFET
封装/箱体：
USOP-4
安装风格：
SMD/SMT

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	AQW410SZ	panasoni	专业光耦	SOP8	65800	光耦原装优势主营型号-可开原型号增税票	询价
深圳市信佳源电子有限公司	AQW412	NAIS	12+	DIPSOP	18346	原装现货	询价
贸泽芯城（深圳）电子科技有限公司	AQW412EHA-AQW412EH	PAN	2021+	DIP8-SOP8	3526	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市深创辉科技有限公司	AQW414	NAIS			200	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
深圳市力通伟业半导体有限公司	AQW414	NAIS	03+	DIP	164	特价热销现货库存100%原装正品欢迎来电订购!	询价
深圳市一线半导体有限公司	AQW414			DIP-8	17		询价
深圳市勤思达科技有限公司	AQW414	NAIS	23+	DIP8	7800	全新原装正品,现货销售	询价
深圳市星佑电子有限公司	AQW414	NAIS	09+	DIP8	4411	只售全新原装货真实现货放心查询	询价
深圳市莱克讯科技有限公司	AQW414	NAIS	2017+	DIP	24589	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市锦达世纪科技有限公司	AQW414	NAIS	06+	DIP8	2000		询价

更多AQW410SZ供应商更新时间2024-5-25 18:49:00

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