Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation

FEATURES 1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2 the space compared with th

文件：88.69 Kbytes 页数：4 Pages

PANASONIC

松下

PhotoMOS RELAYS

PhotoMOS RELAYS FEATURES 1. Reinforced insulation 5,000 V type More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 2. Compact 8-pin DIP size The device comes in a compact (W) 6.4×(L)9.86×(H)3.2 mm (W

文件：48.58 Kbytes 页数：3 Pages

NAIS

松下电器

PhotoMOS RELAYS

PhotoMOS RELAYS FEATURES 1. Reinforced insulation 5,000 V type More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 2. Compact 8-pin DIP size The device comes in a compact (W) 6.4×(L)9.86×(H)3.2 mm (W

文件：48.58 Kbytes 页数：3 Pages

NAIS

松下电器

Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation

FEATURES 1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2 the space compared with th

文件：88.69 Kbytes 页数：4 Pages

PANASONIC

松下

Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation

FEATURES 1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω). 2. Reinforced insulation 5,000 V More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 3. Aprrox. 1/2 the space compared with th

文件：88.69 Kbytes 页数：4 Pages

PANASONIC

松下

PhotoMOS RELAYS

PhotoMOS RELAYS FEATURES 1. Reinforced insulation 5,000 V type More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation). 2. Compact 8-pin DIP size The device comes in a compact (W) 6.4×(L)9.86×(H)3.2 mm (W

文件：48.58 Kbytes 页数：3 Pages

NAIS

松下电器

PhotoMOS GE 1a1b

FEATURES\n1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω).\n2. Reinforced insulation 5,000 V\nMore than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation).\n3. Aprrox. 1/2 the space compared with the mounting 1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω).\n2. Reinforced insulation 5,000 V\nMore than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation).\n3. Aprrox. 1/2 the space compared with the mounting area of a;

Panasonic

松下

Package：8-SMD（0.300"，7.62mm）；包装：管件 类别：继电器 固态继电器 描述：RELAY SPST-NO/NC 100MA 0-400V

Panasonic Electric Works

Package：8-SMD（0.300"，7.62mm）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：继电器 固态继电器 描述：RELAY SPST-NO/NC 100MA 0-400V

Panasonic Electric Works

PhotoMOS GE 1a1b

Panasonic

松下