APT6011B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Iden

APT6011B2VR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=49A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.11Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

APT6011B2VR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT6011B2VRG

N-Channel MOSFET;

ROHS

APT6011B2VR_04

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.