Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件：71.34 Kbytes 页数：4 Pages

Microsemi

美高森美

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件：71.02 Kbytes 页数：4 Pages

ADPOW

MOSFET

Microchip

微芯科技

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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文件：71.15 Kbytes 页数：2 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

null

文件：144.88 Kbytes 页数：5 Pages

ADPOW

isc N-Channel MOSFET Transistor

文件：299.97 Kbytes 页数：2 Pages

ISC

无锡固电