Power MOS 7 is a new generation of low loss, high voltage, N-Channel

POWER MOS 7® MOSFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses alon

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美高森美

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Fas

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

POWER MOS 7 FREDFET

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POWER MOS 7 FREDFET

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Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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isc N-Channel MOSFET Transistor

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ISC

无锡固电

New T-MAX??Package (Clip-mounted TO-247 Package)

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New T-MAX??Package (Clip-mounted TO-247 Package)

文件：66.57 Kbytes 页数：4 Pages

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