Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

文件：205.71 Kbytes 页数：4 Pages

ADPOW

POWER MOS V 1200V 15A 0.800 Ohm

APT

晶科电子

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

文件：61.77 Kbytes 页数：4 Pages

ADPOW

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features • Metal of siliconrectifier, majonty carrier conducton • Guard ring for transient protection • Low power loss high efficiency • High surge capacity, High current capability

文件：134.78 Kbytes 页数：3 Pages

MCC

120 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

文件：412.74 Kbytes 页数：3 Pages

MCC