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APT10086BLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT10086BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody

ADPOW

Advanced Power Technology

APT10086BVFR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.86Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT10086BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

ADPOW

Advanced Power Technology

APT10086BVR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.86Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

APT10086SLC

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally

ADPOW

Advanced Power Technology

APT10086SVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching

ADPOW

Advanced Power Technology

APT10086BVFR_05

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

ADPOW

Advanced Power Technology

10086

AMERICANCORDSET;230cmLONGNEMA5-15PTOIEC60320C13,LEFTHANDED

POWERDYNAMICS

PowerDynamics, Inc

A10086CHNF

ContinuousHingewithClamps,Type4

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

A10086SC

ScrewCover,Type12

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

GKY10086

CERAMICDIELECTRICTRIMMERCAPACITORS

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

WPANT10086

GPSL1bandSMTAntenna

WPI

World Produts Inc.

详细参数

  • 型号:

    APT10086

  • 制造商:

    ADPOW

  • 制造商全称:

    Advanced Power Technology

  • 功能描述:

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

供应商型号品牌批号封装库存备注价格
APT
08+(pbfree)
8866
询价
APT
2018+
TO-3P
11256
只做进口原装正品!假一赔十!
询价
APT
22+
原厂原封
8200
原装现货库存.价格优势!!
询价
APT
18+
TO-247
2050
公司大量全新原装 正品 随时可以发货
询价
ADPOW
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
APT
23+
TO-247B
10000
公司只做原装正品
询价
APT
23+
TO-3P
8560
受权代理!全新原装现货特价热卖!
询价
APT
23+
TO-3P
58
原装正品,假一罚十!
询价
APT
24+25+/26+27+
TO-247-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
APT
24+
TO247
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
更多APT10086供应商 更新时间2024-6-21 16:30:00