APT10086BVFR中文资料下载批发采购无锡固电-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
APT10086BVFR	文件：68.78 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body 文件：68.78 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT10086BVFR	文件：372.82 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.86Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC 文件：372.82 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
APT10086BVFR_05	文件：66.14 Kbytes Page：4 Pages	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 文件：66.14 Kbytes 页数：4 Pages	ADPOW	ADPOW
APT10086BVFR	文件：300 bytes Page：1 Pages	POWER MOS V 1000V 13A 0.860 Ohm	APT 晶科	APT
APT10086BVFRG	文件：300 bytes Page：1 Pages	FREDFETs ROHS	Microchip 微芯科技	Microchip

型号：
APT10086BVFR
制造商：
ADPOW
制造商全称：
Advanced Power Technology
功能描述：
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更多APT10086BVFR供应商更新时间2025-10-29 16:30:00