isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V APPLICATIONS ·DC-DC converter ·Battery Chargers ·High speed power switch

文件：535.44 Kbytes 页数：3 Pages

ISC

无锡固电

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：71.53 Kbytes 页数：2 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：94.34 Kbytes 页数：5 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：94.34 Kbytes 页数：5 Pages

ADPOW

FREDFETs

ROHS

Microchip

微芯科技