Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

1000V 28A 0.350Ω Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along w

文件：63.89 Kbytes 页数：2 Pages

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.37Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：372.97 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOS 7is a new generation of low loss, high voltage, N-Channel

文件：86.24 Kbytes 页数：5 Pages

Microsemi

美高森美

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：92.8 Kbytes 页数：5 Pages

ADPOW

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：92.8 Kbytes 页数：5 Pages

ADPOW

FREDFETs

Microchip

微芯科技