Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

文件：71.15 Kbytes 页数：4 Pages

ADPOW

N-Channel MOSFET

DESCRIPTION · Drain Current -ID= 34A@ TC=25℃ · Drain Source Voltage -VDSS= 1000V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V APPLICATIONS · DC-DC converter · High speed power switch

文件：562.7 Kbytes 页数：3 Pages

ISC

无锡固电

N-Channel MOSFET

ROHS

Microchip

微芯科技

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

文件：35.91 Kbytes 页数：2 Pages

ADPOW

POWER TRANSISTORS(20A,750-850V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10024 and MJ10025 dartington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ated

文件：205.65 Kbytes 页数：4 Pages

MOSPEC

统懋

100mm x 25mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565NM green

文件：52.1 Kbytes 页数：1 Pages

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