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APT1001R1DN	文件：326.98 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1AN	文件：309.65 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1AVR	文件：68.34 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	ADPOW Advanced Power Technology	ADPOW
APT1001R1BN	文件：359.41 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1BN	文件：52.1 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT1001R1BNR	文件：371.23 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1BVFR	文件：70.62 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FastRecoveryBody	ADPOW Advanced Power Technology	ADPOW
APT1001R1GN	文件：331.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1HN	文件：297.69 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.1Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1001R1HVR	文件：66.93 Kbytes Page：4 Pages	PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •FasterSwitching	ADPOW Advanced Power Technology	ADPOW

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供应商	型号	品牌	批号	封装	库存	备注	价格
标准国际(香港)有限公司	APT1001R1HN	MSC			45	公司优势库存热卖中!!!	询价
深圳市安富世纪电子有限公司	APT1001R1HVP	APT	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	APT1001R1HVP	APT		TO-220	3	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市壹芯创科技有限公司	APT1001R1HVR	APT	22+	原厂原封	8200	原装现货库存.价格优势!!	询价
深圳市永贝尔科技有限公司	APT1001R1HVR	ADPOW	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市美思瑞电子科技有限公司	APT1001R1HVR	IR	22+	TO-220	12245	现货,原厂原装假一罚十!	询价
深圳市创新迹电子有限公司	APT1001R1HVR	APT	2023+	TO-247	8700	原装现货	询价
深圳市赛特兴科技有限公司	APT1001R1HVR	APT	QQ咨询	TO-220	828	全新原装研究所指定供货商	询价
深圳市一线半导体有限公司	APT1001R2BN		24+		1100		询价
深圳市胜彬电子有限公司	APT1001R2BN	APT	22+	TO-247	8000	原装正品支持实单	询价

更多APT1001R1DN供应商更新时间2025-7-27 16:20:00

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