isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=11A@ TC=25℃ ·Drain Source Voltage : VDSS=1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 10.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.53 Kbytes 页数：2 Pages

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无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=9.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.1Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：297.69 Kbytes 页数：2 Pages

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无锡固电

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

文件：66.93 Kbytes 页数：4 Pages

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