首页 >APT10021JLL>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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APT10021JLL | Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | ||
APT10021JLL | Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | ADPOW Advanced Power Technology | ||
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. | ADPOW Advanced Power Technology | |||
PowerMOS7isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. PowerMOS7®isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS.BothconductionandswitchinglossesareaddressedwithPowerMOS7®bysignificantlyloweringRDS(ON)andQg.PowerMOS7®combineslowerconductionandswitchinglossesalongwithexceptionally | ADPOW Advanced Power Technology | |||
PowerMOS7isanewgenerationoflowloss,highvoltage,N-ChannelenhancementmodepowerMOSFETS. | ADPOW Advanced Power Technology | |||
DarlingtonPowerTransistors BipolarPowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
CERAMICDIELECTRICTRIMMERCAPACITORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
NPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode SWITCHMODESeries NPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10020andMJ10021Darlingtontransistorsaredesignedforhigh-voltage,high-speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforlineoperateds | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
POWERTRANSISTORS(60A,200-250V,250W)
| MOSPEC MOSPEC | |||
60AMPERENPNSILICONPOWERDARLINGTONTRANSISTORS200AND250VOLTS250WATTS SWITCHMODESeries NPNSiliconPowerDarlington TransistorswithBase-EmitterSpeedupDiode TheMJ10020andMJ10021Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforlineoperated | MotorolaMotorola, Inc 摩托罗拉 | |||
NPNSILICONPOWERDARLINGTONTRANSISTORS SWITCHMODE™Series NPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10020andMJ10021Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforlineoperated | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNSiliconPowerDarligtonTransistorwithBase-EmitterSpeedupDiode60AMPERE,200AND250VOLTS,250WATTS FEATURES: 1.FastTurn–OffTimes 150nsInductiveFallTimeat25ºC(Typ) 750nsInductiveStorageTimeat25ºC(Typ) 2.OperatingTemperatureRange–65to+200ºC 3.100ºCPerformanceSpecifiedfor: ReversedBiasedSOAwithInductiveLoads SwitchingTimeswithInductiveLoads Saturatio | CDIL CDIL | |||
NPNDarlingtonTransistors NPNDarlingtonTransistorsTO-204MA(TO-3) | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
30Watts,1.4-1.6GHzGOLDMOSFieldEffectTransistor Description ThePTF10021isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforlineardriverandfinalapplicationsinthe1.4to1.6GHzrangesuchasDAB/DAR.Itisratedat30wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizatione | Ericsson Ericsson Microelectronics | |||
100-113Gbps10:4Mux/CMUwithDual-DQPSKPrecoderforShortReachApplications | SEMTECH Semtech Corporation | |||
DVB-Cchannelreceiver GENERALDESCRIPTION TheTDA10021HTisasingle-chipDVB-Cchannelreceiverfor4,16,32,64,128and256QAMmodulatedsignals.ThedeviceinterfacesdirectlytotheIFsignal,whichissampledbya10-bitADC. FEATURES •4,16,32,64,128and256QuadratureAmplitudeModulation(QAM)demodul | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
DVB-Cchannelreceiver GENERALDESCRIPTION TheTDA10021HTisasingle-chipDVB-Cchannelreceiverfor4,16,32,64,128and256QAMmodulatedsignals.ThedeviceinterfacesdirectlytotheIFsignal,whichissampledbya10-bitADC. FEATURES •4,16,32,64,128and256QuadratureAmplitudeModulation(QAM)demodul | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
10GbpsPHYTransceiverforLAN/MAN/SANApplications | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | |||
Wideoperatingtemperaturerange | UltralifeUltralife Ultralife | |||
802.11a/b/g/nDual-bandWi-FiAntenna | WPI World Produts Inc. |
详细参数
- 型号:
APT10021JLL
- 功能描述:
MOSFET N-CH 1000V 37A SOT-227
- RoHS:
是
- 类别:
半导体模块 >> FET
- 系列:
POWER MOS 7®
- 标准包装:
10
- 系列:
*
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Microchip Technology |
23+ |
ISOTOP? |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
apt |
14+/15+ |
5000 |
100%进口原装正品公司现货库存! |
询价 | |||
APT |
14+ |
SOT227 |
2000 |
100%全新原装进口正品 主打产品价格优惠 本公司一般纳税人 可开17%增值税票! |
询价 | ||
MicrosemiPowerProductsGr |
23+ |
MOSFETN-CH1000V37ASOT-22 |
1710 |
专业代理销售半导体模块,能提供更多数量 |
询价 | ||
APT |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势!! |
询价 | ||
MICROSEMI |
638 |
原装正品 |
询价 | ||||
APT |
18+ |
SOT227 |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 | ||
Microsemi |
1942+ |
N/A |
98 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
ADPOW |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 | ||
MICROSEMI |
1809+ |
ISOTOP |
96 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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