CEM9926

DualN-ChannelEnhancementModeMOSFET

Feature ●20V/6A,RDS(ON)=33mΩ(MAX)@VGS=4.5V.RDS(ON)=50mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. Applications ●LI-IONProtectionCircuit

CEM9926

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,7A,RDS(ON)=25mW@VGS=4.5V. RDS(ON)=34mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CEM9926A

DualN-ChannelEnhancementModeFieldEffectTransistor

CEM9926A

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,6A,RDS(ON)=27mW@VGS=4.5V. RDS(ON)=40mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CEM9926A

DualN-ChannelEnhancementModeFieldEffectTransistor

Features VDS(V)=20V ID=7A RDS(ON)

CEM9926A

DualN-ChannelEnhancementModeFieldEffectTransistor

Features VDS(V)=20V ID=7A RDS(ON)

CEU9926

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●20V,26A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40m@VΩGS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.

CHM9926AJPT

DualN-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT6Ampere FEATURE *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. *Smallflatpackage.(SO-8) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM9926PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT26Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CJQ9926

DualN-ChannelMOSFET