首页 >APM9926AOC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModeMOSFET N-ChannelEnhancementModeMOSFET Features •20V/6A,RDS(ON)=28mΩ(typ.)@VGS=4.5V RDS(ON)=38mΩ(typ.)@VGS=2.5V •SuperHighDenseCellDesignforExtremelyLowRDS(ON) •ReliableandRugged •SO-8andTSSOP-8Packages Applications •PowerManageme | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
N-ChannelEnhancementModePowerMOSFET | BellingSHANGHAI BELLING CO., LTD. 上海贝岭上海贝岭股份有限公司 | Belling | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●20V,26A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40m@VΩGS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor FEATURES ■20V,4.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TSSOP-8forSurfaceMountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-ChannelEnhancementModeFieldEffectTransistor Feature ●20V/,6A,RDS(ON)=30mΩ(MAX)@VGS=4.5V.RDS(ON)=40mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | CET | ||
DualN-Channel20-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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