首页 >APM9922KC-TRG>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DualN-ChannelEnhancementModeMOSFET Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
DualN-ChannelEnhancementModeMOSFET Features •20V/6A, RDS(ON)=28mW(typ.)@VGS=4.5V RDS(ON)=34mW(typ.)@VGS=2.5V •SuperHighDenseCellDesign •ReliableandRugged •LeadFreeAvailable(RoHSCompliant) Applications •PowerManagementinNotebookComputer,PortableEquipmentandBatteryPoweredSystems | ANPECAnpec Electronics Coropration 茂达电子茂达电子股份有限公司 | ANPEC | ||
PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •HighCurrentGain •ComplementtoDMBT9022 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
PNPDUAL,MATCHEDPAIRSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •LowNoise •HighCurrentGain •MatchedPairofTransistors | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
3-PinSwitch-ModeLEDLampDriverIC | FS First Silicon Co., Ltd | FS | ||
SchottkyBarrierDiodesTMForMixersandDetectors DESCRIPTION SchottkyBarrierdevicesarecurrentlyavailableinsinglebeamlead,dual“T”,ringquadandbridgequadconfigurations.Devicesareavailableinmonolithicformforhybridapplicationsaswellasinhermeticornon-hermeticpackages.Monolithicdevicesarerecommendedforhighestfre | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description TheGTS9922Eprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. Features *Lowon-resistance *Capableof2.5Vgatedrive *OptimalDC/DCbatteryapplication *Surfacemountpackage | GTMGTM CORPORATION 勤益投资控股勤益投资控股股份有限公司 | GTM |
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