N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 400V 15.0A 0.300Ω • Faster Switching • Low Gate Charge • 100 Avalanche Tested • Popular TO-254 Package • Similar to the 2N7227, JX2N7227 and JV2N7227

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ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电