首页 >APHJ25N60P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFET–N-Channel,SUPREMOS600V,25A,126m Description TheSUPREMOS®MOSFETisONSemiconductor’snext generationofhighvoltagesuper−junction(SJ)technologyemploying adeeptrenchfillingprocessthatdifferentiatesitfromthe conventionalSJMOSFETs.Thisadvancedtechnologyandprecise processcontrolprovideslowestRspon−re | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
MOSFET–N-Channel,SUPREMOS600V,25A,126m Description TheSUPREMOS®MOSFETisONSemiconductor’snext generationofhighvoltagesuper−junction(SJ)technologyemploying adeeptrenchfillingprocessthatdifferentiatesitfromthe conventionalSJMOSFETs.Thisadvancedtechnologyandprecise processcontrolprovideslowestRspon−re | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=126mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSupreMOS짰MOSFET600V,25A,125m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.125Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSupreMOS짰MOSFET600V,25A,125m廓 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET25AMPERES600VOLTSRDS(on)=0.21OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
Triac | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
Triac | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge | VishayVishay Siliconix 威世科技 | Vishay | ||
ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge FEATURES •Reducedfigure-of-merit(FOM):RonxQg •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •IncreasedrobustnessduetolowQrr •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcateg | VishayVishay Siliconix 威世科技 | Vishay | ||
ESeriesPowerMOSFETwithFastBodyDiodeandLowGateCharge | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KINGBRIGHT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
KINGBRIGT-今台 |
24+25+/26+27+ |
车规-LED光电器 |
36200 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
23+ |
N/A |
85200 |
正品授权货源可靠 |
询价 | |||
KINGBRIGHT |
2021+ |
0603 |
68200 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
KB |
22+ |
NA |
30000 |
原装现货假一罚十 |
询价 | ||
KB |
23+ |
原厂封装 |
5177 |
现货 |
询价 | ||
KINGBRIGHT |
2020+ |
SMDSMT |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
KINGBRIGHT |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
KNG |
1535+ |
207 |
询价 | ||||
KINGBRIGHT |
2048+ |
LED |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 |
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