首页 >APHG80N10T>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel100-V(D-S)175째CMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel100-V(D-S)175째CMOSFET FEATURES •TrenchFET®PowerMOSFET •175°CMaximumJunctionTemperature •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-CHANNELMOSFETinaTO-263PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-ChannelSuperTrenchPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=80A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETTMMOSFETISOPLUS220 HiPerFET™MOSFETISOPLUS220™ ElectricallyIsolatedBackSurface Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowdraintotabcapacitance( | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs VDSS=100V ID25=80A RDS(on)=12.5mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=80A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class VDSS=100V ID25=80A RDS(on)=15mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -ea | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETs VDSS=100V ID25=80A RDS(on)=12.5mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features Internationalstandardpackages LowRDS(on) RatedforunclampedInductiveloadswitching(UIS) MoldingepoxiesmeetUL94V-0 flammabilit | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class VDSS=100V ID25=80A RDS(on)=15mΩ trr≤200ns N-ChannelEnhancementMode AvalancheRated,HighdV/dt LowGateChargeandCapacitances Features •IXYSadvancedlowgatechargeprocess •Internationalstandardpackages •Lowgatechargeandcapacitance -ea | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TrenchMVTMPowerMOSFET VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on) | IXYS IXYS Integrated Circuits Division | IXYS | ||
TrenchMVTMPowerMOSFET VDSS=100V ID25=80A RDS(on)≤14mΩ N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features InternationalStandardPackages 175°COperatingTemperature AvalancheRated HighCurrentHandlingCapability FastIntrinsicDiode LowRDS(on) | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELMOSFET | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KINGBRIGT-今台 |
24+25+/26+27+ |
车规-LED光电 |
26800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
KNG |
1535+ |
765 |
询价 | ||||
KINGBRIGHT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
KINGBRIGHT |
2021+ |
(ROHS) |
78000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
KingBright |
2023+ |
0402 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
AmphenolRF |
17+ |
DIP |
17900 |
射频适配器-系列之内HD-BNCJack/HD-BNCJackAdapter |
询价 | ||
新 |
287 |
全新原装 货期两周 |
询价 | ||||
2022+ |
283 |
全新原装 货期两周 |
询价 | ||||
AMPHENOL |
20+ |
连接器 |
493 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Amphenol RF |
2308+ |
268447 |
一级代理,原装正品,公司现货! |
询价 |
相关规格书
更多- API8108A
- APM7313
- AQV101A
- AQV201A
- AQV204
- AQV210EH
- AQV210SX
- AQV214
- AQV214EA
- AQV214S
- AQV251
- AQV252
- AQV254
- AQV257A
- AQV414A
- AQV414EAX
- AQW210S
- AQW212
- AQW214A
- AQW414
- AQW614A
- AQY210SX
- AR7120
- ARA05050
- ARK1491
- AS002R2-12
- AS1004S
- AS103-59
- AS1117-2.5
- AS1117-ADJ
- AS1117M3-3.3
- AS119-12
- AS123-12
- AS127-59
- AS139-73
- AS1580T
- AS1581T-2.5
- AS1582T-2.5
- AS169-73
- AS1719D
- AS173-73
- AS179-92
- AS186-302
- AS191-73
- AS2000P
相关库存
更多- APL5331
- AQV101
- AQV201
- AQV203
- AQV210
- AQV210S
- AQV212
- AQV214A
- AQV214H
- AQV221
- AQV251A
- AQV253
- AQV257
- AQV414
- AQV414E
- AQV414S
- AQW210TS
- AQW214
- AQW214EH
- AQW614
- AQY210EH
- AQY214EHAX
- AR7519
- ARA1400
- AS002M2
- AS1004
- AS1012
- AS1117
- AS1117-3.3
- AS1117M3
- AS115-61
- AS1200
- AS125-73
- AS128-73
- AS1431
- AS1581T
- AS1582T
- AS160-86
- AS1717D
- AS172-73
- AS178-73
- AS182-73
- AS190-73
- AS193-73
- AS212-93
