首页 >AP9997GJ其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsufacemountapplication,largerheatsinkthanSO-8andSOTpackage. ▼SimpleDriveRequirement ▼Lo | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. TheSO-8packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowv | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageiswidelypreferredforcommercial-industrialthrough-holeapplications. ▼SimpleDriveRequ | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageiswidelypreferredforcommercial-industrialthrough-holeapplications. ▼SimpleDriveRequ | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
Siliconmonolithicintegratedcircuits Function (1)Theoutputvoltagecanbesetbyexternalresistance. (2)InternalPowerMOStransistorwithBackgateControlfunction (3)Inrushcurrentreduction (4)IntegratedSoftstart (5)Built-inProtectionfunction NMOSovercurrentlimit,overvoltagemute,thermalshutdown,outputg | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
DUALHALFBRIDGEDRIVER DESCRIPTION TheL9997NDisamonolithicintegrateddriver,inBCDtechnologyintendedtodrivevariousloads,includingDCmotors.Thecircuitisoptimizedforautomotiveelectronicsenviromentalconditions. ■HALFBRIDGEOUTPUTSWITHTYPICALRON=0.7Ω ■OUTPUTCURRENTCAPABILITY±1.2A | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
forcarbodyapplications Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
DUALHALFBRIDGEDRIVER DESCRIPTION TheL9997NDisamonolithicintegrateddriver,inBCDtechnologyintendedtodrivevariousloads,includingDCmotors.Thecircuitisoptimizedforautomotiveelectronicsenviromentalconditions. ■HALFBRIDGEOUTPUTSWITHTYPICALRON=0.7Ω ■OUTPUTCURRENTCAPABILITY±1.2A | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
1/5InchOpticalSizeNTSCColorSolid-StateImageDevice?
| SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO |
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