N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：214.69 Kbytes 页数：5 Pages

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Single Drive Requirement

文件：214.69 Kbytes 页数：5 Pages

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Schottky Barrier Diodes TM Ultra High Drive Monolithic

DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broad

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14dBm to 20dBm LO Buffers/Splitters with 짹1dB Variation

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Fully Assembled and Tested

文件：242.35 Kbytes 页数：7 Pages

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