N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. ▼ Simple Drive Requ

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A-POWER

富鼎先进电子

Simple Drive Requirement

文件：99.51 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：103.76 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

Silicon monolithic integrated circuits

Function (1) The output voltage can be set by external resistance. (2) Internal Power MOS transistor with Backgate Control function (3) Inrush current reduction (4) Integrated Soft start (5) Built-in Protection function NMOS overcurrent limit, overvoltage mute, thermal shutdown, output g

文件：156.5 Kbytes 页数：5 Pages

ROHM

罗姆

DUAL HALF BRIDGE DRIVER

DESCRIPTION The L9997ND is a monolithic integrated driver, in BCD technology intended to drive various loads, including DC motors. The circuit is optimized for automotive electronics enviromental conditions. ■ HALF BRIDGE OUTPUTS WITH TYPICAL RON = 0.7Ω ■ OUTPUT CURRENT CAPABILITY±1.2A

文件：96.26 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

DUAL HALF BRIDGE DRIVER

DESCRIPTION The L9997ND is a monolithic integrated driver, in BCD technology intended to drive various loads, including DC motors. The circuit is optimized for automotive electronics enviromental conditions. ■ HALF BRIDGE OUTPUTS WITH TYPICAL RON = 0.7Ω ■ OUTPUT CURRENT CAPABILITY±1.2A

文件：96.26 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体