AP9T18GEH资料datasheet下载供应价格-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AP9T18GEH	文件：132.52 Kbytes Page：4 Pages	G-S Diode embedded, Capable of 2.5V gate drive Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ G-S Diode embedded ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant 文件：132.52 Kbytes 页数：4 Pages	A-POWER 富鼎先进电子	A-POWER
AP9T18GEH	文件：300 bytes Page：1 Pages	G-S Diode embedded, Capable of 2.5V gate drive	APEC 富鼎先进	APEC
AP9T18GEJ	文件：132.52 Kbytes Page：4 Pages	G-S Diode embedded, Capable of 2.5V gate drive Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. ▼ G-S Diode embedded ▼ Capable of 2.5V gate drive ▼ Surface mount package ▼ RoHS Compliant 文件：132.52 Kbytes 页数：4 Pages	A-POWER 富鼎先进电子	A-POWER
AP9T18GH	文件：110.11 Kbytes Page：4 Pages	N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：110.11 Kbytes 页数：4 Pages	A-POWER 富鼎先进电子	A-POWER
AP9T18GH-HF	文件：497.12 Kbytes Page：6 Pages	N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：497.12 Kbytes 页数：6 Pages	A-POWER 富鼎先进电子	A-POWER

更多AP9T18GEH供应商更新时间2026-2-3 16:05:00