丝印：AP9435C；Package：SOP-8L；-30V P-Channel Enhancement Mode MOSFET

Features - VDS = -30V ID =-6.2A - RDS(ON)

文件：1.58678 Mbytes 页数：7 Pages

APME

永源微电子

-30V P-Channel Enhancement Mode MOSFET

APM

永源微

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features · –5.3 A, –30 V RDS(ON) = 50

文件：66.22 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Bipolar Power Transistors

Bipolar Power Transistors PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 140 (Min) @ IC = 1.2 Adc = 125 (Min) @ IC = 3.0 Adc • Low Collector –Emitter Sat

文件：94.72 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

Single P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS

文件：219.85 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体