丝印：AP80N03D；Package：TO-252-3L；30V N-Channel Enhancement Mode MOSFET

Description The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =80A Application

文件：1.46772 Mbytes 页数：7 Pages

APME

永源微电子

丝印：AP80N03D；Package：TO-252；30V N-Channel Enhancement Mode MOSFET

文件：1.3198 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：AP80N03D；Package：TO-252-3L；30V N-Channel Enhancement Mode MOSFET

Description The AP80N03D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =80A Application

文件：1.46772 Mbytes 页数：7 Pages

APME

永源微电子

30V N-Channel Enhancement Mode MOSFET

Features - VDS=30V ID =80A - RDS(ON)

文件：675.77 Kbytes 页数：7 Pages

APME

永源微电子

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =80A - RDS(ON)

文件：1.66203 Mbytes 页数：7 Pages

APME

永源微电子