30V N-Channel Enhancement Mode MOSFET

Features - VDS=30V ID =80A - RDS(ON)

文件：675.77 Kbytes 页数：7 Pages

APME

永源微电子

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID

文件：96.86 Kbytes 页数：8 Pages

NEC

瑞萨

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature

文件：80.6 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature

文件：80.6 Kbytes 页数：9 Pages

SIEMENS

西门子