AP6680BGM-HF资料datasheet下载供应代理第2页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FDD6680AS	文件：123.02 Kbytes Page：8 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6680ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680ASincludesanintegratedSchottkydiode	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6680AS	文件：332.08 Kbytes Page：8 Pages	30VN-ChannelPowerTrench짰SyncFET?	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6680AS	文件：330.94 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDD6680AS	文件：498.11 Kbytes Page：7 Pages	30VN-ChannelMOSFET Features •IncludesSyncFETSchottkybodydiode •Lowgatecharge(21nCtypical) •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability •VDS(V)=30V •ID=50A(VGS=10V) •RDS(ON)	UMWUMW 友台友台半导体	UMW
FDD6680AS_NL	文件：123.02 Kbytes Page：8 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDD6680ASisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680ASincludesanintegratedSchottkydiode	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6680-NL	文件：1.01911 Mbytes Page：8 Pages	N-Channel30-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
FDD6680S	文件：98.22 Kbytes Page：7 Pages	30VN-ChannelPowerTrenchSyncFET? GeneralDescription TheFDD6680SisdesignedtoreplaceasingleMOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDD6680SincludesanintegratedSchottkydiodeusin	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDD6680S	文件：330.91 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=55A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
FDS6680	文件：408.77 Kbytes Page：6 Pages	30VN-ChannelMOSFET Features •Ultra-lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=12A RDS(ON)	UMWUMW 友台友台半导体	UMW
FDS6680	文件：238.91 Kbytes Page：8 Pages	SingleN-ChannelLogicLevelPWMOptimizedPowerTrenchTMMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features ■11.5A,30V.RDS(ON)=0.010W@VGS=10V RDS(ON	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDS6680A	文件：102.87 Kbytes Page：5 Pages	SingleN-Channel,LogicLevel,PowerTrenchMOSFET GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •12.5A,30VRDS(ON)=9.5mΩ@VGS=	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDS6680A	文件：408.77 Kbytes Page：6 Pages	30VN-ChannelMOSFET Features •Ultra-lowgatecharge •Highperformancetrenchtechnologyforextremely lowRDS(ON) •Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=12A RDS(ON)	UMWUMW 友台友台半导体	UMW
FDS6680A	文件：202.11 Kbytes Page：5 Pages	SingleN-Channel,LogicLevel,PowerTrench짰MOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDS6680AS	文件：551.45 Kbytes Page：8 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDS6680ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680ASincludesanintegratedSchottkydio	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDS6680AS	文件：1.01191 Mbytes Page：8 Pages	30VN-ChannelPowerTrenchSyncFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDS6680AS_NL	文件：551.45 Kbytes Page：8 Pages	30VN-ChannelPowerTrenchSyncFET GeneralDescription TheFDS6680ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680ASincludesanintegratedSchottkydio	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDS6680S	文件：222.28 Kbytes Page：9 Pages	30VN-ChannelPowerTrenchSyncFET? GeneralDescription TheFDS6680SisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680SincludesanintegratedSchottkydiode	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDU6680	文件：121.05 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features •46A,30VRDS(ON)=10mΩ@V	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDU6680	文件：121.05 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
FDU6680A	文件：126.83 Kbytes Page：6 Pages	30VN-ChannelPowerTrenchMOSFET GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

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详细参数

型号：
AP6680BGM-HF
制造商：
A-POWER
制造商全称：
Advanced Power Electronics Corp.
功能描述：
Lower Gate Charge, Simple Drive Requirement

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百域芯科技有限公司	AP6680BGM-HF	Bychip	23+	SOP8	10000	高品质替代,技术支持,参数选型	询价
深圳市科芯源微电子有限公司	AP6680BGM-HF	APEC/富鼎	23+	SO-8	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市粤科源兴科技有限公司	AP6680BGM-HF	APEC	13+	NA	37238	原装分销	询价
深圳市莱克讯科技有限公司	AP6680BGM-HF	APEC	2017+	SOP8	45586	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
齐创科技(上海,北京,青岛)有限公司	AP6680BGM-HF	SR	23+	SO-8	5000	原装正品,假一罚十	询价
深圳市科恒伟业电子有限公司	AP6680BGM-HF	APEC	1742+	SOP-8	98215	只要网上有绝对有货!只做原装正品!	询价
深圳宇航军工半导体有限公司	AP6680BGM-HF	NA	19+		63880	原厂代理渠道,每一颗芯片都可追溯原厂；	询价
深圳诚思涵科技有限公司	AP6680BGM-HF	APEC	18+	SOP-8	85600	保证进口原装可开17%增值税发票	询价
深圳市百视威讯电子科技有限公司	AP6680BGM-HF		23+	N/A	49100	正品授权货源可靠	询价
深圳兆威电子有限公司	AP6680BGM-HF	富鼎/APEC	22+	SOP8L	24124	原装正品现货	询价

更多AP6680BGM-HF供应商更新时间2024-5-16 14:04:00

详细参数

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