CEP50N06

N-ChannelMOSFETusesadvancedtrenchtechnology

CEP50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.

CEP50N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.

CEU50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,36A,RDS(ON)=18mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU50N06

N-ChannelMOSFETusesadvancedtrenchtechnology

CEU50N06

N-Channel60V(D-S)MOSFET

CEU50N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,36A,RDS(ON)=18mW(typ)@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CEU50N06G

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,40A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CHM50N06NPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT50Ampere FEATURE ​​​​​​​*Smallpackage.(D2PAK) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM50N06PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT36Ampere FEATURE *Smallpackage.(TO-252A) ​​​​​​​*SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.