N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 40A , RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：508.65 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 50 Ampere FEATURE ​​​​​​​* Small package. (D2PAK) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：239.86 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 36 Ampere FEATURE * Small package. (TO-252A) ​​​​​​​* Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：198.76 Kbytes 页数：2 Pages

CHENMKO

力勤

50A,60V Heatsink Planar N-Channel Power MOSFET

文件：1.4536 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体