首页 >AP4525GEM其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·DrainCurrent:ID=23A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=21A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.25Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconDiffusedPowerTransistor GENERALDESCRIPTION Enhancedperformance,newgeneration,high-voltage,high-speedswitchingnpntransistorinaplasticfull-packenvelopeintendedforuseinhorizontaldeflectioncircuitsofcolourtelevisionreceiversandp.cmonitors.Featuresexceptionaltolerancetobasedriveandcollecto | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconDiffusedPowerTransistor GENERALDESCRIPTION Enhancedperformance,newgeneration,high-voltage,high-speedswitchingnpntransistorinaplasticfull-packenvelopeintendedforuseinhorizontaldeflectioncircuitsofcolourtelevisionreceiversanp.cmonitors.Featuresexceptionaltolerancetobasedriveandcollector | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconDiffusedPowerTransistor GENERALDESCRIPTION Enhancedperformance,newgeneration,high-voltage,high-speedswitchingnpntransistorinaplasticenvelopeintendedforuseinhorizontaldeflectioncircuitsofcolourtelevisionreceiversandp.cmonitors.Featuresexceptionaltolerancetobasedriveandcollectorcurrent | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SiliconDiffusedPowerTransistor GENERALDESCRIPTION Enhancedperformance,newgeneration,high-voltage,high-speedswitchingnpntransistorinaplasticfull-packenvelopeintendedforuseinhorizontaldeflectioncircuitsofcolourtelevisionreceiversandp.cmonitors.Featuresexceptionaltolerancetobasedriveandcollecto | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-EmitterSustainingVoltage-:VCEO(SUS)=800V(Min) •HighSwitchingSpeed APPLICATIONS •DesignedforuseinhorizontaldeflectioncircuitsofcolorTVreceiversandPCmonitors. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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