80V N-Channel Enhancement Mode MOSFET

Features - VDS = 80V ID =400A - RDS(ON)

文件：721.6 Kbytes 页数：7 Pages

APME

永源微电子

85V N-Channel Enhancement Mode MOSFET

Features - VDS = 85V ID =400A - RDS(ON)

文件：937.87 Kbytes 页数：6 Pages

APME

永源微电子

80V N-Channel Enhancement Mode MOSFET

Features - VDS = 80V ID =400A - RDS(ON)

文件：744.12 Kbytes 页数：7 Pages

APME

永源微电子

100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =400A - RDS(ON)

文件：1.07395 Mbytes 页数：7 Pages

APME

永源微电子

100V N-Channel Enhancement Mode MOSFET

Features - VDS = 100V ID =400A - RDS(ON)

文件：1.23117 Mbytes 页数：7 Pages

APME

永源微电子

150V N-Channel Enhancement Mode MOSFET

Features - VDS = 150V ID =400A - RDS(ON)

文件：671 Kbytes 页数：7 Pages

APME

永源微电子

High Performance IR Enhanced P-Type silicon p-i-n Photodiodes

Features Optimized Responsivity for Operation at1064 nm. Guard Ring Construction Antireflection Coated Hermetically Sealed Package Wide Range of Operating Voltage (0to -200V) Applications Nd: YAG Laser Detection Optical Communications Intrusion Alarm Systems Process Control Instrument

文件：224.32 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

High Performance IR Enhanced P-Type silicon p-i-n Photodiodes

Features Optimized Responsivity for Operation at1064 nm. Guard Ring Construction Antireflection Coated Hermetically Sealed Package Wide Range of Operating Voltage (0to -200V) Applications Nd: YAG Laser Detection Optical Communications Intrusion Alarm Systems Process Control Instrument

文件：224.32 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

High Performance IR Enhanced P-Type silicon p-i-n Photodiodes

Features Optimized Responsivity for Operation at1064 nm. Guard Ring Construction Antireflection Coated Hermetically Sealed Package Wide Range of Operating Voltage (0to -200V) Applications Nd: YAG Laser Detection Optical Communications Intrusion Alarm Systems Process Control Instrument

文件：224.32 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：AP50G03GD；Package：TO-252-4L；30V NP-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =47A - RDS(ON)

文件：859.64 Kbytes 页数：10 Pages

APME

永源微电子