丝印：AP40T14G；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T14G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：774.27 Kbytes 页数：6 Pages

NCEPOWER

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丝印：AP40T15AGU；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T15AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：834.51 Kbytes 页数：7 Pages

NCEPOWER

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丝印：AP40T15GU；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：767.21 Kbytes 页数：6 Pages

NCEPOWER

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丝印：AP40T17AD；Package：TO-263-2L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T17AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：645.13 Kbytes 页数：6 Pages

NCEPOWER

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丝印：AP40T17AG；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：716.17 Kbytes 页数：6 Pages

NCEPOWER

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丝印：AP40T20AD；Package：TO-263-2L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T20AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：741.48 Kbytes 页数：6 Pages

NCEPOWER

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丝印：AP40T20AGU；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T20AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：782.26 Kbytes 页数：6 Pages

NCEPOWER

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丝印：AP40T20ALL；Package：TOLL-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The series of devices uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal fo

文件：937.27 Kbytes 页数：8 Pages

NCEPOWER

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丝印：AP40T35ALL；Package：TOLL-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T35ALL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：660.63 Kbytes 页数：6 Pages

NCEPOWER

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丝印：AP40T35AVD；Package：TO-263-7L；NCE N-Channel Super Trench Power MOSFET

Description The NCEAP40T35AVD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：876.41 Kbytes 页数：6 Pages

NCEPOWER

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