丝印：AP4A；Package：VSSOP；88 MHz, Precision, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifier

1FEATURES 23• (Typical 5V Supply, Unless Otherwise Noted) • Input Offset Voltage: ±150 μV (max) • Input Referred Voltage Noise: 5.8 nV/√Hz • Input Bias Current: 100 fA • Gain Bandwidth Product: 88 MHz • Supply Voltage Range: 1.8V to 5.5V • Supply Current Per Channel – LMP7717: 1.15 mA – L

文件：1.15346 Mbytes 页数：42 Pages

TI

德州仪器

丝印：AP4A；Package：VSSOP；88 MHz, Precision, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifier

1FEATURES 23• (Typical 5V Supply, Unless Otherwise Noted) • Input Offset Voltage: ±150 μV (max) • Input Referred Voltage Noise: 5.8 nV/√Hz • Input Bias Current: 100 fA • Gain Bandwidth Product: 88 MHz • Supply Voltage Range: 1.8V to 5.5V • Supply Current Per Channel – LMP7717: 1.15 mA – L

文件：1.15346 Mbytes 页数：42 Pages

TI

德州仪器

丝印：AP4A；Package：VSSOP；88 MHz, Precision, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifier

1FEATURES 23• (Typical 5V Supply, Unless Otherwise Noted) • Input Offset Voltage: ±150 μV (max) • Input Referred Voltage Noise: 5.8 nV/√Hz • Input Bias Current: 100 fA • Gain Bandwidth Product: 88 MHz • Supply Voltage Range: 1.8V to 5.5V • Supply Current Per Channel – LMP7717: 1.15 mA – L

文件：1.15346 Mbytes 页数：42 Pages

TI

德州仪器

丝印：AP4A；Package：VSSOP；88 MHz, Precision, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifier

1FEATURES 23• (Typical 5V Supply, Unless Otherwise Noted) • Input Offset Voltage: ±150 μV (max) • Input Referred Voltage Noise: 5.8 nV/√Hz • Input Bias Current: 100 fA • Gain Bandwidth Product: 88 MHz • Supply Voltage Range: 1.8V to 5.5V • Supply Current Per Channel – LMP7717: 1.15 mA – L

文件：1.15346 Mbytes 页数：42 Pages

TI

德州仪器

丝印：AP4A；Package：VSSOP；88 MHz, Precision, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifier

1FEATURES 23• (Typical 5V Supply, Unless Otherwise Noted) • Input Offset Voltage: ±150 μV (max) • Input Referred Voltage Noise: 5.8 nV/√Hz • Input Bias Current: 100 fA • Gain Bandwidth Product: 88 MHz • Supply Voltage Range: 1.8V to 5.5V • Supply Current Per Channel – LMP7717: 1.15 mA – L

文件：1.15346 Mbytes 页数：42 Pages

TI

德州仪器

丝印：AP4040Q；Package：PDFN3.3X3.3-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：701.14 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP4045AGU；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4045AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

文件：794.7 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP4045GU；Package：DFN5X6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：731.19 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP4075GU；Package：PDFN5x6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4075GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

文件：692.7 Kbytes 页数：6 Pages

NCEPOWER

新洁能

丝印：AP4090AGU；Package：PDFN5x6-8L；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP4090AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

文件：592.6 Kbytes 页数：6 Pages

NCEPOWER

新洁能