NCEAP40T35AVD中文资料无锡新洁能股份数据手册PDF规格书

厂商型号	NCEAP40T35AVD
功能描述	NCE N-Channel Super Trench Power MOSFET
丝印标识	AP40T35AVD
封装外壳	TO-263-7L
文件大小	876.41 Kbytes
页面数量	6 页
生产厂商	Wuxi NCE Power Semiconductor Co., Ltd
企业简称	NCEPOWER【无锡新洁能股份】
中文名称	无锡新洁能股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-4 8:10:00
人工找货	NCEAP40T35AVD价格和库存，欢迎联系客服免费人工找货

描述 Description

The NCEAP40T35AVD uses Super Trench technology that is

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

RDS(ON) and Qg. This device is ideal for high-frequency switching

and synchronous rectification.

Application

● Automotive application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous rectification

General Features

● VDS =40V,ID =480A (Silicon Limited)

RDS(ON)=0.68mΩ (typical) @VGS=10V

● Excellent gate charge x RDS(on) product(FOM)

● Very low on-resistance RDS(on)

● 175 °C operating temperature

● Pb-free lead plating

● 100 UIS tested

● 100 ΔVds tested

● AEC-Q101 qualified