-60V P-Channel Enhancement Mode MOSFET

Features - VDS = -60V ID =-30A - RDS(ON)

文件：1.66046 Mbytes 页数：7 Pages

APME

永源微电子

-60V P-Channel Enhancement Mode MOSFET

AP30P06D采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至-2.6V的操作。该器件适用于负载开关或PWM应用。 一般特性高功率，和电流处理能力，无铅产品TO-252表贴封装 VDS = -60V，ID = -30A \nRDS（ON）<37m\nΩ@ V GS = -4.5V RDS（ON）<45m\nΩ@ V GS = -2.5V 高功率和电流处理能力\n无铅产品\nTO-252表贴封装\n;

APM

永源微

TMOS POWER FET 30 AMPERES 60 VOLTS

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS

文件：247.61 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

文件：191 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on)= 0.080 OHM P–Channel Enhancement–Mode Silicon Gate TMOSV is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This newtechnology more than doubles the present cell density of our 50and 60 volt

文件：191 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉