AP30P10BD资料datasheet下载供应代理APME-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
AP30P10BD	文件：1.45083 Mbytes Page：7 Pages	-100V P-Channel Enhancement Mode MOSFET Features - VDS = -100V ID =-28A - RDS(ON) 文件：1.45083 Mbytes 页数：7 Pages	APME 永源微电子	APME
AP30P10BD	文件：300 bytes Page：1 Pages	-100V P-Channel Enhancement Mode MOSFET	APM 永源微	APM
CED30P10	文件：423.18 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：423.18 Kbytes 页数：4 Pages	CET 华瑞	CET
CEU30P10	文件：423.18 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. 文件：423.18 Kbytes 页数：4 Pages	CET 华瑞	CET
YJP30P10A	文件：739.45 Kbytes Page：6 Pages	P-Channel Enhancement Mode Field Effect Transistor 文件：739.45 Kbytes 页数：6 Pages	YANGJIE 扬杰电子	YANGJIE

更多AP30P10BD供应商更新时间2026-10-23 13:30:00